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LADN10 40CTQ045 A100MD BYV27100 G80386DX ISL6261 1690AD AQZ264
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  Datasheet File OCR Text:
 SMD Type
Schottky Diodes MMBD5819
Diodes
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
+0.1 2.4-0.1
Features
Power Dissipation: PD = 300mW Collector Current: IF = 1A Collector-Base Voltage: VR = 40V
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
PIN Array
Absolute Maximum Ratings Ta = 25
Parameter Collector Current Collector-Base Voltage Power Dissipation Operating and Storage Junction Temperature Range Symbol IF VR PD Tj,TSTG Rating 1 40 300 -55 to +150 Unit A V mW
Electrical Characteristics Ta = 25
Parameter Reverse Breakdown Voltage Forward Voltage (pulse test) Symbol V(BR)R VF IR = 1mA IF = 1A IF = 3A Reverse Voltage Leakage Current Diode Capacitance IR CD VR = 20V VR = 40V VR = 0, f = 1.0MHz Testconditons Min 40 0.6 0.9 1 1 120 A pF Typ Max Unit V V
Marking
Marking SL
+0.1 0.38-0.1
0-0.1
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